S. C. Deane

Improved defect-pool model for charged defects in amorphous silicon

M. J. Powell, S. C. Deane · Physical review. B, Condensed matter · 1993 · 291 citations

Materials Science, Engineering, Physics +11

Defect pool in amorphous-silicon thin-film transistors

M. J. Powell, C. van Berkel, A. R. Franklin et al. · Physical review. B, Condensed matter · 1992 · 237 citations

Electrical Engineering, Bias Stress, Engineering +10

Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon

M. J. Powell, S. C. Deane · Physical review. B, Condensed matter · 1996 · 180 citations

Engineering, Silicon On Insulator, Defect Tolerance +18

Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors

Ralf B. Wehrspohn, S. C. Deane, I. D. French et al. · Journal of Applied Physics · 2000 · 150 citations

Engineering, Relative Importance, Bond Defect Creation +16

Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors

S. C. Deane, Ralf B. Wehrspohn, M. J. Powell · Physical review. B, Condensed matter · 1998 · 101 citations

Engineering, Temperature Dependence, Silicon On Insulator +16