S. C. Deane - Concepedia

Concepedia

Author

S. C. Deane

Philips (United Kingdom)

Also Known As

S C Deane, S. C. Deane, S.C Deane, S.C. Deane, Steve C. Deane, Steve Deane

48

Publications

1.9K

Citations

24

H-Index

37

Concepts

All Affiliations

Philips (United Kingdom)University of Cambridge Philips (Finland)Bridge University Max Planck Institute of Microstructure Physics

SC

About

S. C. Deane is an author at Philips (United Kingdom) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	23	1.7K
2	Applied Physics	21	22	1.6K
3	Medicine	1	1	98
4	Natural Sciences	1	1	180
5	Biomedical Engineering	1	1	98

S. C. Deane

×

27

Publications

1.9K

Citations

24

H-Index

	Year	Citations
Improved defect-pool model for charged defects in amorphous silicon M. J. Powell, S. C. Deane Physical review. B, Condensed matter Materials ScienceEngineeringPhysicsApplied PhysicsPhysical Chemistry	1993	291
Defect pool in amorphous-silicon thin-film transistors M. J. Powell, C. van Berkel, A. R. Franklin, Physical review. B, Condensed matter Electrical EngineeringBias StressEngineeringTransistor CharacteristicsStress-induced Leakage Current	1992	237
Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon M. J. Powell, S. C. Deane Physical review. B, Condensed matter EngineeringSilicon On InsulatorDefect ToleranceElectronic Gap StatesDefect-pool Model	1996	180
Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors Ralf B. Wehrspohn, S. C. Deane, I. D. French, Journal of Applied Physics EngineeringRelative ImportanceBond Defect CreationSi–h BondIntegrated Circuits	2000	150
Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors S. C. Deane, Ralf B. Wehrspohn, M. J. Powell Physical review. B, Condensed matter EngineeringTemperature DependenceSilicon On InsulatorDefect RemovalSemiconductor Device	1998	101
Integrated systems for rapid point of care (PoC) blood cell analysis C. van Berkel, James D. Gwyer, S. C. Deane, Lab on a Chip Point-of-care TestingEngineeringAnalytical MicrosystemsBlood CellOrgan-on-a-chip	2011	98
A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators Richard Cross, M.M. De Souza, S. C. Deane, IEEE Transactions on Electron Devices EngineeringGate Bias StressZinc OxideBand GapSemiconductor Device	2008	98
Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors M. J. Powell, S. C. Deane, W. I. Milne Applied Physics Letters Electrical EngineeringBias StressEngineeringPhysicsStress-induced Leakage Current	1992	60
Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon M. J. Powell, S. C. Deane, Ralf B. Wehrspohn Physical review. B, Condensed matter EngineeringH AtomSilicon On InsulatorNanoelectronicsSilicene	2002	55
Field-effect conductance in amorphous silicon thin-film transistors with a defect pool density of states S. C. Deane, M. J. Powell Journal of Applied Physics	1993	51

Page 1