Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Engineering, Materials Engineering, Materials Science +17

Field and thermionic-field emission in Schottky barriers

Francesco Padovani, R. Stratton · Solid-State Electronics · 1966 · 1.3K citations

Natural Sciences, Materials Science, Physics +9

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

High-Power GaN P-N Junction Blue-Light-Emitting Diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Japanese Journal of Applied Physics · 1991 · 835 citations

Engineering, Electrical Engineering, Materials Science +17

The Physics of Semiconductor Devices

Andrew Grant · Physics Bulletin · 1978 · 795 citations

Engineering, Materials Science, Physics +12