K. R. Evans

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

F. Hamdani, A. Botchkarev, W. Kim et al. · Applied Physics Letters · 1997 · 107 citations

Engineering, Materials Engineering, Materials Science +17

Alloy scattering in <i>p</i>-type Al<i>x</i>Ga1−<i>x</i>As

D. C. Look, D. K. Lorance, J. R. Sizelove et al. · Journal of Applied Physics · 1992 · 64 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +11

Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN

J. T. Trexler, S. J. Pearton, P. H. Holloway et al. · MRS Proceedings · 1996 · 57 citations

Engineering, Materials Engineering, Materials Science +14

Intersubband infrared absorption in a GaAs/Al0.3Ga0.7As quantum well structure

M. O. Manasreh, Frank Szmulowicz, D. W. Fischer et al. · Applied Physics Letters · 1990 · 52 citations

Natural Sciences, Materials Science, Physics +17

Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells

Ikai Lo, W. C. Mitchel, M. O. Manasreh et al. · Applied Physics Letters · 1992 · 48 citations

Engineering, Materials Engineering, Materials Science +16