F. Hamdani

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

F. Hamdani, A. Botchkarev, W. Kim et al. · Applied Physics Letters · 1997 · 107 citations

Engineering, Materials Engineering, Materials Science +17

Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

F. Hamdani, M. Yeadon, David J. Smith et al. · Journal of Applied Physics · 1998 · 100 citations

Engineering, Materials Engineering, Materials Science +17

Oscillator strengths for optical band-to-band processes in GaN epilayers

Bernard Gil, F. Hamdani, H. Morkoç̌ · Physical review. B, Condensed matter · 1996 · 82 citations

Natural Sciences, Materials Science, Physics +17

Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO

F. Hamdani, A. Botchkarev, H. Tang et al. · Applied Physics Letters · 1997 · 50 citations

Engineering, Materials Engineering, Materials Science +17

Analysis of carrier mobility and concentration in Si-doped GaN grown by reactive molecular beam epitaxy

H. Tang, W. Kim, A. Botchkarev et al. · Solid-State Electronics · 1998 · 40 citations

Engineering, Materials Engineering, Materials Science +16