F. Hamdani

Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

F. Hamdani, A. Botchkarev, W. Kim et al. · Applied Physics Letters · 1997 · 107 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

F. Hamdani, M. Yeadon, David J. Smith et al. · Journal of Applied Physics · 1998 · 99 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Oscillator strengths for optical band-to-band processes in GaN epilayers

Bernard Gil, F. Hamdani, H. Morkoç̌ · Physical review. B, Condensed matter · 1996 · 82 citations

Materials Science, Photonics, Wide-bandgap Semiconductor +14

Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO

F. Hamdani, A. Botchkarev, H. Tang et al. · Applied Physics Letters · 1997 · 50 citations

Materials Science, Substrate Surface Polarity, Electrical Engineering +15

<i>In situ</i> transmission electron microscopy of AlN growth by nitridation of (0001) α-Al2O3

M. Yeadon, Michael Thomas Marshall, F. Hamdani et al. · Journal of Applied Physics · 1998 · 39 citations

Materials Science, Aln Growth, Aluminium Nitride +13