Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2006 · 49 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials CharacterizationSemiconductor MaterialsDislocations In SemiconductorsIii-v SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCarrier GasesCompressive StrainDislocation DensityDislocation Density EvolutionGallium NitrideGallium Nitride (Gan) MaterialsMetalorganic Vapor Phase EpitaxyPinholes
Abstract Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H 2 ), nitrogen (N 2 ) and H 2 /N 2 mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X‐ray diffraction (XRD). The higher the N 2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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