Spatial distribution of impurities in delta-doped n-type GaAs

Electronic properties of two-dimensional systems

Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations

Natural Sciences, Chemistry, Physics +16

Measurement of isotype heterojunction barriers by <i>C</i>-<i>V</i> profiling

H. Kroemer, Wu-Yi Chien, J. S. Harris et al. · Applied Physics Letters · 1980 · 396 citations

Engineering, Electrical Engineering, Materials Science +17

Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAs

C. E. C. Wood, G. Metze, Joseph D. Berry et al. · Journal of Applied Physics · 1980 · 240 citations

Engineering, Materials Engineering, Materials Science +14

Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

E. F. Schubert, J. E. Cunningham, W. T. Tsang · Solid State Communications · 1987 · 120 citations

Engineering, Electrical Engineering, Materials Science +14

The δ-Doped Field-Effect Transistor

E. F. Schubert, K. H. Ploog · Japanese Journal of Applied Physics · 1985 · 119 citations

Engineering, Electrical Engineering, Materials Science +17