The δ-Doped Field-Effect Transistor

Abstract

A new Schottky-gate FET grown by molecular-beam epitaxy is presented. A V-shaped potential well with a 2D electron-gas is generated in the epi-layer by implementation of a δ-function like doping profile. The δ-doped FET is scaled down to its ultimate physical limit normal to the crystal surface. The advantages of the new device are high gate-breakdown voltage, high transconductance due to the proximity of the electron channel to the crystal surface, and high electron concentration in the channel. Current-voltage and capacitance-voltage measurements reveal a large breakdown voltage and a narrow impurity and carrier distribution.