K. H. Ploog - Concepedia

Author

K. H. Ploog

Paul Drude Institute for Solid State Electronics

Also Known As

K H Ploog, K Ploog, K. H Ploog, K. H. PLOOG, K. H. Ploog, K. Ploog, K.-H. Ploog, K.H Ploog, K.H. Ploog, Kalus H. Ploog

112

Publications

3.6K

Citations

H-Index

Concepts

All Affiliations

Paul Drude Institute for Solid State Electronics Max Planck Institute for Solid State Research Centre National de la Recherche Scientifique Max Planck Society Universidad Autónoma de Madrid

About

K. H. Ploog is an author at Paul Drude Institute for Solid State Electronics specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	38	3.2K
2	Applied Physics	23	37	3.2K
3	Electrical Engineering	12	13	2.2K
4	Materials Engineering	4	4	94
5	Natural Sciences	3	3	131

K. H. Ploog

Publications

3.4K

Citations

H-Index

Page 1

	Year	Citations
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes Patrick Waltereit, O. Brandt, A. Trampert, Nature SemiconductorsWhite OledElectrical EngineeringSolid-state LightingEngineering	2000	1.7K
The delta-doped field-effect transistor (&#948;FET) E. F. Schubert, Axel Fischer, K. H. Ploog IEEE Transactions on Electron Devices	1986	212
Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy M. Giehler, M. Ramsteiner, O. Brandt, Applied Physics Letters Wide-bandgap SemiconductorCrystal StructureOptical MaterialsEngineeringSemiconductors	1995	127
The δ-Doped Field-Effect Transistor E. F. Schubert, K. H. Ploog Japanese Journal of Applied Physics SemiconductorsNew Schottky-gate FetElectrical EngineeringElectronic Devicesδ-Doped Field-effect Transistor	1985	119
Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates Y. Takagaki, P. V. Santos, E. Wiebicke, Applied Physics Letters Materials ScienceAln FilmHigh Saw VelocityAluminium NitrideEngineering	2002	92
Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures E. Tournié, K. H. Ploog Thin Solid Films Materials ScienceEngineeringApplied PhysicsMultilayer HeterostructuresMolecular Beam Epitaxy	1993	88
Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells J.‐M. Chauveau, A. Trampert, K. H. Ploog, Applied Physics Letters PhotoluminescenceN Spatial RedistributionsEngineeringPhysicsGainnas Quantum Wells	2004	57
Polarization-dependent spectroscopic study of <i>M</i>-plane GaN on γ-LiAlO2 Sandip Ghosh, Patrick Waltereit, O. Brandt, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringPolarization-dependent Spectroscopic StudyM-plane Gan Film	2002	55
Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO2 substrates C. Rivera, J. L. Pau, E. Muñoz, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPolarization-sensitive PhotodetectorsOptical Properties	2006	55
Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions M. Ramsteiner, J. Menniger, O. Brandt, Applied Physics Letters Wide-bandgap SemiconductorNotorious Yellow LuminescenceEngineeringLuminescence PropertyOptical Properties	1996	55

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