A new analytical model of the "Bird's beak"

Abstract

The numerical simulation of technological processes is very important for the fabrication of integrated circuits. The authors have developed the two-dimensional simulator OSIRIS allowing the simulation of ion implantation and redistribution of dopants in silicon. An original analytical model for oxide growth has been developed that gives very good simulation of the "bird's beak" of SEMIROX structures. As an example, a complete simulation of an n-channel MOS device is presented with the redistribution impurity profiles and the oxide layer shape at the end of the process.