Symposium on VLSI Technology · 1997 · 10 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor ReliabilityCarrier LifetimeCmos ReliabilityGate Dielectric EngineeringGate DielectricsLow-voltage Cmos DesignNitridationOxidationSilicon Nitride
Ultrathin gate dielectrics are important to realize high performance and low-voltage operation CMOS devices. An advanced ultrathin gate dielectric formation process, that is, direct nitridation of silicon and sequential oxidation, is proposed and evaluated to suppress boron penetration and to improve hot-carrier reliability. No boron penetration, longer hot-carrier lifetime and high drain current are achieved in MOSFETs with 2.5nm oxidized nitride gate dielectric.
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