2005 · 11 citations · 4 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesBipolar Junction TransistorsDevice CharacterizationDevice ModelingDevice ReliabilityMemory DevicesTiming AnalysisLatchesSingle Event EffectsSwitching Behavior
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A verified proton induced latch-up in space (CMOS SRAM)
L. Adams, E. Daly, R. Harboe-Sørensen et al. · IEEE Transactions on Nuclear Science · 1992 · 61 citations