Butt-coupling loss of 0.1dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy

Ultrasmall waveguide bends: the corner mirrors of the future?

L.H. Spiekman, Y.S. Oei, M.K. Smit et al. · IEE Proceedings - Optoelectronics · 1995 · 35 citations

Engineering, Electrical Engineering, Electronic Materials +11

Facet growth in selective area epitaxy of Inp by MOMBE

R. Matz, H. Heinecke, B. Baur et al. · Journal of Crystal Growth · 1993 · 27 citations

Life Sciences, Biotechnology, Cell Signaling +4

Selective area growth of InGaAsP/InP waveguide modulator structures by chemical beam epitaxy

T. H. Chiu, Y. Chen, J. E. Zucker et al. · Journal of Crystal Growth · 1993 · 14 citations

Engineering, Electrical Engineering, Materials Science +16

Interface manipulation in multiple-layer structures grown by chemical beam epitaxy

R.T.H. Rongen, A. J. C. van Rijswijk, Maarten Leys et al. · Semiconductor Science and Technology · 1997 · 13 citations

Engineering, Materials Engineering, Materials Science +17

Selective area chemical beam epitaxy for butt-coupling integration

P. Legay, J.L. Benchimol, M. Allovon et al. · Journal of Crystal Growth · 1996 · 13 citations

Engineering, Materials Engineering, Materials Science +14