Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic EngineeringD-band PerformanceApplied PhysicsNoiseMinimum Noise FigureMicroelectronicsMicrowave EngineeringOptoelectronicsWaveguide InterfaceSemiconductor Device
Reports the W-band and D-band performance of 0.1- mu m T-gate pseudomorphic In/sub 0.53/Al/sub 0.47/As/In/sub 0.60/GaAs high electron mobility transistors (HEMTs). The device achieved 1.3-dB noise figure and 8.2-dB associated gain when biased and tuned for a minimum noise figure at 95 GHz. It achieved 7.3-dB gain when biased and tuned for gain at 141.5 GHz. The two-stage hybrid low-noise amplifier (LNA) fabricated with these devices demonstrated a minimum noise figure of 2.6 dB and 14.2 dB associated gain at a waveguide interface at 92 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations
Electrical Engineering, Millimeter Wave Technology, Engineering +8
94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs
K.L. Tan, R.M. Dia, D.C. Streit et al. · IEEE Electron Device Letters · 1990 · 88 citations
Semiconductors, Semiconductor Technology, Electrical Engineering +11
W-band InGaAs HEMT low noise amplifiers
K.H.G. Duh, P.C. Chao, P. Ho et al. · 1990 · 67 citations
Geok Ing Ng, Won-Pyo Hong, D. Pavlidis et al. · IEEE Electron Device Letters · 1988 · 40 citations
Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +15
Ultra low noise high gain W-band InP-based HEMT downconverter
P.D. Chow, K. H. Tan, D.C. Streit et al. · 2002 · 29 citations