IEEE Transactions on Electron Devices · 2008 · 55 citations · 33 references
EngineeringElectrical EngineeringLow-power DesignMicroelectronicsMicrowave EngineeringHigh-frequency Semiconductor DevicesIntegrated Circuit DesignNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesRadio-frequency Integrated CircuitsFin Field-effect TransistorsHigh-frequency PerformanceNoise AnalysisNoise FigureNoise Figure AnalysisNoise In Field-effect TransistorsNoise ParametersNoise Performance Analysis
In this paper, the first-ever published investigation on radio-frequency (RF) noise performance of FinFETs is reported. The impact of the geometrical dimensions of FinFETs on RF noise parameters such as the channel length, the fin width, as well as the fin number is analyzed. A minimum noise figure of 1.35 dB is obtained with an associated available gain of 13.5 dB at 10 GHz for V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dd</sub> = 0.5 V. This result is quite encouraging to bring solutions for future low-power RF systems.
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