International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering · 1995 · 10 citations · 20 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignNonlinear Circuit AnalysisBipolar Junction Transistor ModelingLarge-signal Device ModelingLarge-signal ModelingNonlinear Device CharacterizationParameter ExtractionS-parameter CharacterizationTransistor NonlinearityTransmission Coefficients
Abstract A quick and efficient parameter extraction method for Si‐bipolar junction transistors, suited for nonlinear CAD, is presented. The large‐signal parameters are extracted from S‐parameter data measured at one bias point only. The model accounts for distributed base and bond wires. A comparison of simulated and measured values of reflection and transmission coefficients and nonlinear behavior of a single transistor shows the capability of the extraction method.
20