Low temperature epitaxial growth by LEPECVD

Anomalous strain relaxation in SiGe thin films and superlattices

F. K. LeGoues, B.S. Meyerson, J. F. Morar · Physical Review Letters · 1991 · 362 citations

Natural Sciences, Materials Science, Physics +17

Cooperative growth phenomena in silicon/germanium low-temperature epitaxy

B.S. Meyerson, Kevin J. Uram, F. K. LeGoues · Applied Physics Letters · 1988 · 341 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ge growth on Si using atomic hydrogen as a surfactant

Akira Sakai, Toru Tatsumi · Applied Physics Letters · 1994 · 236 citations

Natural Sciences, Materials Engineering, Materials Science +17

The characteristics of strain-modulated surface undulations formed upon epitaxial Si1−xGex alloy layers on Si

A. G. Cullis, David Robbins, A. J. Pidduck et al. · Journal of Crystal Growth · 1992 · 180 citations

Natural Sciences, Materials Engineering, Materials Science +14

Silicon epitaxy at 650–800 °C using low-pressure chemical vapor deposition both with and without plasma enhancement

T. J. Donahue, R. Reif · Journal of Applied Physics · 1985 · 144 citations

Engineering, Materials Engineering, Materials Science +17