Applied Physics Letters · 1992 · 44 citations · 6 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSemiconductor MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsSilicon MaterialsEnergy DensityEpitaxial MaterialsFemtosecond Laser PulsesLattice Parameter AnalysisLattice Parameter DeterminationLiquid Phase EpitaxySemiconductor CrystallographySilicon Epitaxy
Epitaxial βFeSi2 layers thermally grown on (111) Si substrates have been irradiated by 25 ns ruby laser pulses in the energy density range 0.3–0.7 J/cm2. Rutherford backscattering analyses in combination with the channeling effect have shown that the silicide stoichiometry does not change for irradiations up to an energy density of 0.5 J/cm2, while alignment of the irradiated silicide along the [111] substrate normal direction is observed. Transmission electron diffraction in the plan view configuration showed that this silicide phase has a cubic symmetry with a lattice parameter very similar to that of Si. Diffraction patterns taken along different poles of the substrate indicated that the epitaxial phase is 180° rotated about the [111] normal direction like the B type NiSi2 and CoSi2 silicides.
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Epitaxial films of semiconducting FeSi2 on (001) silicon
John E. Mahan, K.M. Geib, G. Y. Robinson et al. · Applied Physics Letters · 1990 · 177 citations · Full text