C. d’Anterroches

Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxy

N. Cherief, C. d’Anterroches, R.C. Cinti et al. · Applied Physics Letters · 1989 · 173 citations

Semiconductors, Abrupt Interface, Engineering +11

The thermal oxidation of silicon the special case of the growth of very thin films

F. Rochet, S. Rigo, M. Froment et al. · Advances In Physics · 1986 · 127 citations

Materials Science, Engineering, Silica Network +14

Atomic structure of [011] and [001] near-coincident tilt boundaries in germanium and silicon

C. d’Anterroches, A. Bourret · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1984 · 114 citations

Engineering, Microscopy, Electron Diffraction +18

Low-temperature transport properties of ultrathin CoSi2 epitaxial films

P. A. Badoz, A. Briggs, E. Rosencher et al. · Applied Physics Letters · 1987 · 57 citations

Materials Science, Semiconductors, Low-temperature Transport Measurements +14

Co/Si(111) interface: Formation of an initial CoSi2 phase at room temperature

J.‐Y. Veuillen, J. Derrien, P. A. Badoz et al. · Applied Physics Letters · 1987 · 55 citations

Engineering, Solid-state Chemistry, Chemistry +17