Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxy

Abstract

Semiconducting βFeSi2 has been successfully grown on a Si (111) substrate. It has been proven that under ultrahigh vacuum conditions, the solid phase epitaxy temperature can be lowered to ∼800 K, where only the βFeSi2 phase is stabilized. The disilicide formation was monitored in situ by various surface-sensitive techniques such as low-energy electron diffraction, Auger electron spectroscopy, and ultraviolet photoelectron spectroscopy. The epitaxial relationships were ascertained by transmission electron diffraction and microscopy including high-resolution cross-sectional image. The results show the epitaxy of βFeSi2 (110) and (101) planes parallel to the Si (111) plane. The disilicide-silicon heterojunction displays an atomically abrupt interface.