Concepedia

Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast

M. Buzzo, Mauro Ciappa, M. Stangoni, Wolf Fïchtner

Microelectronics Reliability · 2005 · 20 citations · 5 references

DOI

Concepts

References

5

Metal-semiconductor contacts

M. Pepper · Physics in Technology · 1974 · 1.1K citations

Mechanism for secondary electron dopant contrast in the SEM

C. P. Sealy, MR Castell, Peter R. Wilshaw · Journal of Electron Microscopy · 2000 · 171 citations

, , +16

LIII. The Examination of p-n Junctions with the Scanning Electron Microscope†

C.W. Oatley, T. E. Evekhart · Journal of Electronics and Control · 1957 · 60 citations

, , +9

Mapping electrically active dopant profiles by field-emission scanning electron microscopy

Raşit Turan, D. D. Perovic, D.C. Houghton · Applied Physics Letters · 1996 · 48 citations · Full text

, , +17

Electron-beam-induced potentials in semiconductors: calculation and measurement with an SEM/SPM hybrid system

Ch. Thomas, I. Joachimsthaler, R. Heiderhoff et al. · Journal of Physics D Applied Physics · 2004 · 22 citations

, , +17