Thick In x Ga1−x N Films Prepared by Reactive Sputtering with Single Cermet Targets

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

Engineering, Electrical Engineering, Materials Science +17

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Temperature dependence of the fundamental band gap of InN

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Journal of Applied Physics · 2003 · 395 citations · Full text

Engineering, Materials Science, Physics +17

Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

D. Doppalapudi, Soumendra N. Basu, Karl Ludwig et al. · Journal of Applied Physics · 1998 · 228 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17