IEEE Electron Device Letters · 1993 · 33 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave AmplifiersMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsWide-bandgap Semiconductor DevicesGain CompressionHigh-electron-mobility TransistorsHigh-frequency ElectronicsLow-noise AmplificationLow-noise AmplifiersPower Added EfficiencyPower EfficiencyPower Output
The DC and RF performance of delta -doped channel AlInAs/GaInAs on InP power high-electron-mobility transistors (HEMTs) are reported. A 450- mu m-wide device with a gate-length of 0.22 mu m has achieved an output power of 150 mW (at the 1-dB gain compression point) with power-added efficiency of 20% at 57 GHz. The device has a saturated output power of 200 mW with power-added efficiency of 17%. This is the highest output power measured from a single InP-based HEMT at this frequency, and demonstrates the feasibility of these HEMTs for high-power applications in addition to low-noise applications at V-band.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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High-power V-band pseudomorphic InGaAs HEMT
K.L. Tan, D.C. Streit, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 61 citations