Synthesis of epitaxial GaN single-crystalline film by ultra high vacuum r.f. magnetron sputtering method

Polarized Raman spectra in GaN

T. Azuhata, T. Sota, K. Suzuki et al. · Journal of Physics Condensed Matter · 1995 · 283 citations

Natural Sciences, Materials Science, Physics +16

Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

Theeradetch Detchprohm, Kazumasa Hiramatsu, Kenji Itoh et al. · Japanese Journal of Applied Physics · 1992 · 269 citations

Engineering, Materials Engineering, Materials Science +17

Preparation and properties of III-V nitride thin films

K. Kubota, Yoshiaki Kobayashi, Keiichi Fujimoto · Journal of Applied Physics · 1989 · 194 citations · Full text

Natural Sciences, Materials Science, Physics +17

Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

W. C. Hughes, W. H. Rowland, Mark A. Johnson et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 188 citations

Engineering, Materials Engineering, Materials Science +15

Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy

Shota Kitamura, Kazumasa Hiramatsu, Nobuhiko Sawaki Nobuhiko Sawaki · Japanese Journal of Applied Physics · 1995 · 181 citations

Engineering, Materials Engineering, Materials Science +17