Concepedia

Atomic layer deposition of ruthenium at 100 °C using the RuO<sub>4</sub>-precursor and H<sub>2</sub>

Matthias M. Minjauw, Jolien Dendooven, Boris Capon, Marc Schaekers, Christophe Detavernier

Journal of Materials Chemistry C · 2014 · 42 citations · 20 references

DOI

Concepts

Abstract

A novel Ru ALD process at 100 °C using the inorganic RuO<sub>4</sub>-precursor in a reduction chemistry with H<sub>2</sub> is being reported, and a proposal for the underlying reaction mechanism is given.

References

20

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Ruthenium Thin Films Grown by Atomic Layer Deposition

Titta Aaltonen, Petra Alén, Mikko Ritala et al. · Chemical Vapor Deposition · 2003 · 277 citations

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