In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth

An analytical formula and important parameters for low-energy ion sputtering

J. Bohdansky, J. Roth, H.L. Bay · Journal of Applied Physics · 1980 · 273 citations

Natural Sciences, Materials Science, Analytical Chemistry +12

Low-temperature selective epitaxial growth of silicon at atmospheric pressure

T. O. Sedgwick, M. Berkenblit, T. S. Kuan · Applied Physics Letters · 1989 · 91 citations

Engineering, Materials Engineering, Materials Science +16

Magnetron etching of polysilicon: Electrical damage

W. Greene, J. Krüger, G. Kooi · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 75 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Epitaxial growth of silicon from SiH4 in the temperature range 800–1150°C

W.G. Townsend, M.E. Uddin · Solid-State Electronics · 1973 · 54 citations

Engineering, Materials Engineering, Materials Science +15

Carbon and oxygen removal from silicon (100) surfaces by remote plasma cleaning techniques

R. E. Thomas, M. J. Mantini, R. A. Rudder et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1992 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +17