Beam Effects in the Analysis of As-Doped Silicon by Channeling Measurements

Abstract

Channeling-effect measurements with MeV He ions have been used to study the lattice location of As in silicon. Over the concentration range studied (5 × 1019 − 1.2 × 1021/cm3) As was found to be 90–95% on substitutional sites. However, it was found that bombardment with the analysis beam caused 20–40% of the As to move off lattice sites. This effect may be responsible for the relatively low As substitutional fraction found in previous investigations. No bombardment-induced off-lattice movement was found in Sb-doped Si indicating that this movement is species dependent.