G. Fladda

THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON

G. Fladda, K. Björkqvist, L. Eriksson et al. · Applied Physics Letters · 1970 · 89 citations

Ion Implantation, Boron Nitride, Engineering +13

Anomalously high yields of elastically scattered¹²C-ions from Zr, Hf, Tl, and Hg atoms implanted into silicon

Bengt Domeij, G. Fladda, Nils Gunnar Johansson · Radiation Effects · 1970 · 51 citations

Engineering, Ion Beam Instrumentation, Silicon On Insulator +17

Critical angles for channeling of low energy ions in tungsten

I. Bergström, K. Björkqvist, Bengt Domeij et al. · Canadian Journal of Physics · 1968 · 39 citations

X-ray Crystallography, Tungsten Single Crystal, Engineering +18

LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO Ge

K. Björkqvist, Bengt Domeij, L. Eriksson et al. · Applied Physics Letters · 1968 · 27 citations

Materials Science, Ion Implantation, Quantum Lattice System +11

Evidence of a replacement reaction between ion implanted substitutional Tl dopants and interstitial Si atoms

G. Fladda, P. Mazzoldi, E. Rimini et al. · Radiation Effects · 1969 · 24 citations

Materials Science, Lattice Location, Interstitial Si Atoms +15