THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON

Abstract

Channeling-effect measurements have been used to investigate the lattice location of boron atoms implanted into silicon at an energy of 56 keV and with doses in the interval 1014–1015 ions/cm2. Measurements have been made as a function of implantation temperature and subsequent anneal treatment. The effect of post-bombardment with different doses of 680-keV protons has also been investigated.