Concepedia

R. O. Schwenker

RO

6

Publications

208

Citations

6

H-Index

1971

Active since

Affiliations

IBM (United States)(Current)

R. O. Schwenker is an author at IBM (United States) specializing in engineering, applied physics, and crystalline defects.

Top concepts

EngineeringApplied PhysicsPhysicsCrystalline DefectsElectrical EngineeringMaterial ScienceMicroelectronicsNoiseThin FilmsMicrostructure

Publications per year

1971–2000

6

Publications

6

Arsenic Clustering in Silicon

R. O. Schwenker, Er Pan, R. F. Lever · Journal of Applied Physics · 1971 · 99 citations

Electrical Engineering, Total Arsenic, Engineering +12

Dislocation propagation and emitter edge defects in silicon wafers

S. M. Hu, S. P. Klepner, R. O. Schwenker et al. · Journal of Applied Physics · 1976 · 40 citations

Engineering, Dislocation Interaction, Crystalline Defects +10

Effects of ion implantation on substrate hardening and film stress reduction and their effect on the yield of bipolar transistors

S. M. Hu, R. O. Schwenker · Journal of Applied Physics · 1978 · 23 citations

Materials Science, Electrical Engineering, Ion Implantation +15

Diffusion of arsenic along dislocations in epitaxial silicon films

David R. Campbell, K. N. Tu, R. O. Schwenker · Thin Solid Films · 1975 · 21 citations

Dislocation Interaction, Engineering, Applied Physics +4

Etch Rate Characterization of Borosilicate Glasses as Diffusion Sources

R. O. Schwenker · Journal of The Electrochemical Society · 1971 · 15 citations

Materials Science, Engineering, Boron Diffusion Process +8

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