Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition

GaN Growth Using GaN Buffer Layer

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Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

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Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

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Mosaic structure in epitaxial thin films having large lattice mismatch

V. Srikant, James S. Speck, David R. Clarke · Journal of Applied Physics · 1997 · 448 citations

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Lattice parameters of gallium nitride

M. Leszczyński, H. Teisseyre, T. Suski et al. · Applied Physics Letters · 1996 · 418 citations

Natural Sciences, Materials Science, Physics +17