Microscopic mechanisms of accurate layer-by-layer growth of β-SiC

Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

Shigehiro Nishino, J. A. Powell · Applied Physics Letters · 1983 · 926 citations

Engineering, Materials Engineering, Materials Science +17

Surface structure and composition of β- and 6H-SiC

R. Kaplan · Surface Science · 1989 · 319 citations

Natural Sciences, Materials Engineering, Materials Science +12

Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface

S. M. Gates · Surface Science · 1988 · 214 citations

Natural Sciences, Materials Engineering, Materials Science +12

Surface analysis of cubic silicon carbide (001)

T.M. Parrill, Y. W. Chung · Surface Science · 1991 · 116 citations

Natural Sciences, Materials Engineering, Materials Science +13

Schottky barrier diodes on 3C-SiC

S. Yoshida, Katsuhiro Sasaki, E. Sakuma et al. · Applied Physics Letters · 1985 · 108 citations

Engineering, Electrical Engineering, Materials Science +17