1994 · 18 citations · 24 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilityFailure CriteriaFailure TheoriesInterconnect TechnologySemiconductor ReliabilityStress-strain BehaviorAluminum InterconnectsElectromigrationElectromigration ReliabilityLine WidthMetal MicrostructurePassivationPolycrystalline MaterialsVoids
Grain-boundary (GB) erosion-type voids and transgranular slit-like voids are found to be two competing electromigration (EM) failure modes in partly-bamboo interconnects. The effects of metal microstructure, passivation thickness, line width and length, and EM stress conditions on the two failure modes were studied. The kinetics for GB-type failures is strongly affected by the threshold effect in polycrystalline segments and is well described by the Multi-Lognormal (MLN) function with stress-dependent number of elements. The model predicts that the EM resistance of partly-bamboo lines at VLSI operating conditions is limited by the slit failure mode, rather than by GB-type failures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Stress evolution due to electromigration in confined metal lines
M. A. Korhonen, P. Bo rgesen, K. N. Tu et al. · Journal of Applied Physics · 1993 · 733 citations