Suppression of etch pit and hillock formation on carbonization of Si substrate and low temperature growth of SiC

Growth and Characterization of Cubic SiC Single‐Crystal Films on Si

J. A. Powell, L. G. Matus, Maria A. Kuczmarski · Journal of The Electrochemical Society · 1987 · 184 citations

Natural Sciences, Materials Engineering, Materials Science +17

Conversion of Si to epitaxial SiC by reaction with C2H2

C. J. Mogab, H. J. Leamy · Journal of Applied Physics · 1974 · 137 citations

Engineering, Materials Engineering, Materials Science +17

Antiphase boundaries in epitaxially grown β-SiC

P. Pirouz, C. M. Chorey, J. A. Powell · Applied Physics Letters · 1987 · 124 citations

Natural Sciences, Materials Engineering, Materials Science +17

Antiphase-domain-free growth of cubic SiC on Si(100)

Kentaro Shibahara, S. Nishino, H. Matsunami · Applied Physics Letters · 1987 · 71 citations

Engineering, Materials Engineering, Materials Science +17

Atomic layer epitaxy of cubic SiC by gas source MBE using surface superstructure

Takashi Fuyuki, Michiaki Nakayama, Tatsuo Yoshinobu et al. · Journal of Crystal Growth · 1989 · 61 citations

Engineering, Materials Engineering, Materials Science +17