Dislocation-free silicon-doped gallium arsenide grown by LEC procedure

A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals

A. S. Jordan, R. Caruso, A. R. Von Neida · Bell System Technical Journal · 1980 · 345 citations

Engineering, Electrical Engineering, Materials Science +17

Defect structure introduced during operation of heterojunction GaAs lasers

P. M. Petroff, R. L. Hartman · Applied Physics Letters · 1973 · 311 citations

Engineering, Electrical Engineering, Materials Science +17

Some defects in crystals grown from the melt - I. Defects caused by thermal stresses

E. Billig · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · 1956 · 183 citations

Natural Sciences, Materials Engineering, Materials Science +17

Dislocation-free GaAs and InP crystals by isoelectronic doping

Guy Jacob, M. Duseaux, J. Farges et al. · Journal of Crystal Growth · 1983 · 154 citations

Engineering, Electrical Engineering, Materials Science +14

A study on the relationship between growth technique and dopants on the electrical properties of GaAs with special reference to LEC growth

J.B. Mullin, A. Royle, S. Benn · Journal of Crystal Growth · 1980 · 47 citations

Engineering, Electrical Engineering, Materials Science +17