Fabrication of AlGaInAs and GaInAsP buried heterostructure lasers by in situ etching

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	Year	Citations
Etching of InP by HCl in an OMVPE reactor C. Caneau, R. Bhat, M.A. Koza, Journal of Crystal Growth Chemical EngineeringOmvpe ReactorEngineeringSurface ScienceHydrogen	1991	43
1.3-μm AlGaInAs buried-heterostructure lasers K. Takemasa, Mitsuru Kubota, Tsutomu Munakata, IEEE Photonics Technology Letters Materials SciencePhotonicsAdvanced Laser Processing1.3-μM Algainas-inpEngineering	1999	37
1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance B. Stegmüller, B. Borchert IEEE Photonics Technology Letters Gainalas Strained-layerPhotonicsOptical MaterialsDegrees CEngineering	1993	31
Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds D. Bertone, R. Campi, G. Morello Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringOptical PropertiesApplied Physics	1998	23
MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride P. Wolfram, W. Ebert, J. Kreissl, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringSitu EtchingApplied Physics	2000	14

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