1.3-μm AlGaInAs buried-heterostructure lasers

Abstract

1.3-μm AlGaInAs-InP strained multiple-quantumwell (MQW) buried-heterostructure (BH) lasers have been successfully fabricated. InP current blocking layers could be smoothly regrown using the simple HF pretreatment, although the etched active region includes Al-containing layers. The threshold current I/sub th/ was typically 11 mA for as-cleaved 350-μm-long devices, which is about 30% lower than that of the ridge laser counterparts. A maximum continuous-wave operating temperature as high as 155/spl deg/C was achieved. For the 200-μm-long device with the high-reflective-coated rear-facet, I/sub th/ was as low as 7.5 mA and characteristic temperature T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> was 80 K. The BH lasers also provided more circular far-field patterns and lower thermal resistances than for ridge lasers.