Concepedia

Author

B. Borchert

Siemens (Germany)

Also Known As

B Borchert, B. Borchert, Bernt Borchert, F.K. Reinhart

61

Publications

1.3K

Citations

20

H-Index

48

Concepts

All Affiliations

Siemens (Germany)Infineon Technologies (Germany)Technical University of MunichPhilipps University of MarburgFraunhofer Institute for Telecommunications, Heinrich Hertz Institute
BB

About

B. Borchert is an author at Siemens (Germany) specializing in engineering, photonics, and optoelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

16

24

831

2

Applied Physics

12

14

519

3

Electrical Engineering

5

5

151

4

Materials Science

2

2

89

5

Computer Science

1

1

10

B. Borchert

×

32

Publications

1.2K

Citations

20

H-Index

YearCitations

Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm

F. Höhnsdorf, J. Koch, S. Leu,

Electronics Letters

1999

169

Gain-coupled DFB lasers versus index-coupled and phase shifted DFB lasers: a comparison based on spatial hole burning corrected yield

K. David, Geert Morthier, P. Vankwikelberge,

IEEE Journal of Quantum Electronics

1991

142

1.29 µm GaInNAs multiple quantum-well ridge-waveguidelaser diodes with improved performance

B. Borchert, A. Yu. Egorov, S. Illek,

Electronics Letters

1999

87

Growth of high quality InGaAsN heterostructures and their laser application

A. Yu. Egorov, D. Bernklau, B. Borchert,

Journal of Crystal Growth

2001

78

Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime

Martin R. Hofmann, Anke Wagner, C. Ellmers,

Applied Physics Letters

2001

75

Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes

B. Borchert, A. Yu. Egorov, S. Illek,

IEEE Photonics Technology Letters

2000

65

1.55 mu m gain-coupled quantum-well distributed feedback lasers with high single-mode yield and narrow linewidth

B. Borchert, K. David, B. Stegmüller,

IEEE Photonics Technology Letters

1991

63

Low threshold lasing operation of narrow stripeoxide-confinedGaInNAs/GaAs multiquantum well lasers at 1.28 µm

S. Illek, A. Ultsch, B. Borchert,

Electronics Letters

2000

57

Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers

Martin R. Hofmann, Nils C. Ger­hardt, Anke Wagner,

IEEE Journal of Quantum Electronics

2002

44

Comparison of different modelling techniques for longitudinally invariant integrated optical waveguides

D. De Zutter, P.E. Lagasse, J. Buus,

IEE Proceedings J Optoelectronics

1989

36

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