B. Stegmüller

1.55 mu m gain-coupled quantum-well distributed feedback lasers with high single-mode yield and narrow linewidth

B. Borchert, K. David, B. Stegmüller et al. · IEEE Photonics Technology Letters · 1991 · 63 citations

Optical Materials, Engineering, Laser Science +18

1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance

B. Stegmüller, B. Borchert · IEEE Photonics Technology Letters · 1993 · 31 citations

Gainalas Strained-layer, Photonics, Optical Materials +11

Narrow-stripe metal-clad ridge-waveguide laser for 1.3 μm wavelength

Markus‐Christian Amann, B. Stegmüller · Applied Physics Letters · 1986 · 29 citations

Photonic Device, Photonics, Waveguides +12

Fabrication and characteristics of improved strained quantum-well GaInAlAs gain-coupled DFB lasers

B. Borchert, B. Stegmüller · Electronics Letters · 1993 · 29 citations

Photonics, Engineering, Laser Science +7

Advanced 1.55 µm Quantum-Well GaInAlAs Laser Diodes with Enhanced Performance

Bernd Borchert, Roland Gessner Roland Gessner, B. Stegmüller · Japanese Journal of Applied Physics · 1994 · 28 citations

Photonics, Ridge-waveguide Lasers, Engineering +13