Fine Pattern Replication Using ETS-1 Three-Aspherical Mirror Imaging System

Abstract

The engineering test stand ETS-1 three-aspherical-mirror imaging system has been developed. In the fine pattern replication using a Cr mask in static exposure, the resist pattern is replicated in the exposure area of 10 mm×2 mm with the line and space pattern width of 60 nm, the isolated line pattern width of 40 nm, and the hole pattern width of 150 nm. For the scanning exposure, the resist pattern is replicated with the line and space pattern width of 60 nm in an exposure area of 10 mm×10 mm. We have also constructed a multilayer reflectivity measurement system at the BL10 beamline of the NewSUBARU facility. The full field of ULE6025 mask reflectivity can be measured. Furthermore, the low-outgassing chemically amplified resist EUV010 has been developed based on KrF chemically amplified resist.