Hot carrier light emission from GaAs HEMT devices

Abstract

The authors measure the spectrum of radiative emission from a high quality HEMT device and relate this to the energy distribution of the channel electrons. The discussion focuses on the intraband and interband contributions to the spectrum. The intraband, bremsstrahlung component gives evidence for very energetic electrons (Tel approximately=6000 K). The radiative recombination of carriers, however, is characterized by a very much lower temperature.