Electronics Letters · 1991 · 13 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsRecombinationSemiconductor DevicesHigh-frequency Semiconductor DevicesIonization ProcessesOptical Properties Of SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCarrier Recombination DynamicsCurrentsEffective Recombination RateElectron Impact IonizationElectron-hole RecombinationLight-emitting DevicesPhoton Emission MechanismsRecombination Mechanisms
It is shown that the dominant emission mechanism of photons with high energy (hv > Eg) in GaAs MESFETs is the recombination of channel electrons with holes generated by impact ionisation. Accordingly, the intensity of emitted visible light is proportional to the product of the electron and hole currents and therefore to recombination rate.