Concepedia

P. Narozny

PN

Statistics

Publications

9

Citations

218

H-Index

9

Active since

1984

Affiliations

Daimler (Germany)(Current)

University of Rostock

P. Narozny is an author at Daimler (Germany) specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsPhysicsSemiconductorsMicroelectronicsNanoelectronicsOptoelectronicsQuantum MaterialsElectronic Devices

Publications per year

1984–1995

9

Publications

9

High quality epitaxial GaAs and InP wafers by isoelectronic doping

H. Beneking, P. Narozny, N. Emeis · Applied Physics Letters · 1985 · 65 citations

Electrical Engineering, Dislocation Density, Deep Levels +14

Si/SiGe heterojunction bipolar transistor made by molecular-beam epitaxy

P. Narozny, H. Dämbkes, H. Kibbel et al. · IEEE Transactions on Electron Devices · 1989 · 32 citations

Semiconductors, Si Homojunction Transistors, Electrical Engineering +14

Boron doping of SiGe base of heterobipolar transistors

H. Kibbel, E. Kasper, P. Narozny et al. · Thin Solid Films · 1990 · 21 citations

Breakdown Mechanisms in Pseudomorphic InAlAs/In<sub>x</sub>Ga<sub>1-x</sub>As High Electron Mobility Transistors on InP. I: Off-State

Jürgen Dickmann, Steffen Schildberg, K. Riepe et al. · Japanese Journal of Applied Physics · 1995 · 20 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +16

Breakdown Mechanisms in Pseudomorphic InAlAs/In<sub>x</sub>Ga<sub>1-x</sub>As High Electron Mobility Transistors on InP. II: On-State

Jürgen Dickmann, Steffen Schildberg, K. Riepe et al. · Japanese Journal of Applied Physics · 1995 · 19 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

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