Applied Physics Letters · 1978 · 56 citations · 14 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDopingEpitaxial GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDouble HeterostructuresHeterostructure LasersHeterostructure MaterialsHeterostructure OptoelectronicsHeterostructuresIn-situ DopingMolecular Beam EpitaxySemiconductor Laser Fabrication
Molecular beam epitaxial (MBE) growth of InP/Ga0.47In0.53As/InP double heterostructures has resulted in pulsed room-temperature lasing at 1.65 μm. Thresholds as low as 3.2 kA/cm2 for a 0.6-μm-thick layer has been achieved. These results were achieved by ’’premixing’’ the Ga and In together in a common source oven and precisely monitoring the Ga/In flux ratio during the growth of the Ga0.47In0.53As layer. Cd diffusion from a vapor source allowed us to p dope the top InP layer in the as-grown MBE wafer.
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Effect of dopants on transmission loss of low-OH-content optical fibres
Hiroshi Osanai, T. Shioda, T. Moriyama et al. · Electronics Letters · 1976 · 164 citations