An empirical fit to minority hole mobilities

Abstract

Minority hole mobilities in highly-doped n-type silicon are determined by electron-beam-induced current measurements. They are used in conjunction with existing data taken from the literature to derive an empirical expression for the minority hole moblility as a function of majority-carrier density 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ≤ N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> ≤ cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . It is anticipated that this empirical fit will be valuable in device modeling.