Sheng S. Li

The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon

Sheng S. Li, W. R. Thurber · Solid-State Electronics · 1977 · 264 citations

Electrical Engineering, Engineering, Dopant Density +7

Device modeling and simulation of the performance of Cu(In1−x,Gax)Se2 solar cells

Jiyon Song, Sheng S. Li, Che-Hsuan Huang et al. · Solid-State Electronics · 2003 · 166 citations

Device Modeling, Ii-vi Semiconductor, Electrical Engineering +7

The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon

Sheng S. Li · Solid-State Electronics · 1978 · 136 citations

Electrical Engineering, Engineering, Physics +9

In 0.6 Ga 0.4 As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

Lin Jiang, Sheng S. Li, Nien-Tze Yeh et al. · Applied Physics Letters · 2003 · 135 citations

Engineering, Long Carrier Lifetime, Optoelectronic Devices +20

Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy

Lei L. Kerr, Sheng S. Li, Steve Johnston et al. · Solid-State Electronics · 2004 · 106 citations

Ii-vi Semiconductor, Deep-level Transient Spectroscopy, Electrical Engineering +8