Publication | Closed Access
The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon
136
Citations
22
References
1978
Year
Electrical EngineeringEngineeringPhysicsDopant DensityApplied PhysicsCondensed Matter PhysicsTemperature DependenceSemiconductor MaterialSemiconductor Device FabricationSilicon On InsulatorHole MobilitySemiconductor Device
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