Nien-Tze Yeh

In 0.6 Ga 0.4 As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

Lin Jiang, Sheng S. Li, Nien-Tze Yeh et al. · Applied Physics Letters · 2003 · 135 citations

Engineering, Long Carrier Lifetime, Optoelectronic Devices +20

Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals

Ching-Ting Lee, Hung-Pin Shiao, Nien-Tze Yeh et al. · Solid-State Electronics · 1997 · 36 citations

Materials Engineering, Materials Science, Engineering +12

Sb-based semiconductors for low power electronics

Nien-Tze Yeh, Pei-Chin Chiu, Jen-Inn Chyi et al. · Journal of Materials Chemistry C · 2013 · 26 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

1.55 μ m emission from InAs quantum dots grown on GaAs

Tung‐Po Hsieh, Pei-Chin Chiu, Jen-Inn Chyi et al. · Applied Physics Letters · 2005 · 19 citations

Optical Materials, Engineering, Semiconductor Nanostructures +16

InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

Nien-Tze Yeh, Wei‐Sheng Liu, Shu-Han Chen et al. · Applied Physics Letters · 2002 · 16 citations

Optical Materials, Engineering, Laser Science +20