Applied Physics Letters · 2005 · 19 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsChemical Vapor DepositionIii-v SemiconductorsOptical Properties Of SemiconductorsQuantum DotsSemiconductor Device MaterialsSemiconductor NanomaterialsElectroluminescenceMetalorganic Chemical Vapor DepositionOptical PropertiesSemiconductor Quantum Dots
We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3μm photoluminescence (PL) at room temperature, as the GaAs cap layer is directly grown on the QDs. The PL emission can be extended to 1.49μm when an In0.25Ga0.75As overgrown layer is inserted between the cap layer and the InAs QDs. The use of TMGa or TEGa for the growth of the GaAs cap layer is essential for a further increase in the emission wavelength of the InAs QDs. Strong PL emission at 1.55μm with a linewidth of 28meV can be obtained as the GaAs cap layer is grown by TEGa, while the optical properties degrade severely when using TMGa.
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1.3 μm room-temperature GaAs-based quantum-dot laser
Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations
1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
O.B. Shchekin, D.G. Deppe · Applied Physics Letters · 2002 · 350 citations