Chinese Physics Letters · 2009 · 10 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDislocations In SemiconductorsDopingLight SourcesLight-emitting DiodesLuminescent MaterialsSemiconductor Device MaterialsAtomic Layer EpitaxyCrystalline StructureDislocation SubstructuresGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting DevicesLight-emitting Diode MaterialsUltraviolet Light-emitting Diodes
We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317 nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.
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250 nm AlGaN light-emitting diodes
V. Adivarahan, Wenhong Sun, A. Chitnis et al. · Applied Physics Letters · 2004 · 196 citations
Near-band-edge photoluminescence of wurtzite-type AlN
E. Kuokštis, Jianping Zhang, Q. Fareed et al. · Applied Physics Letters · 2002 · 107 citations