ECS Transactions · 2013 · 15 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsDevice CharacterizationIntegrated Circuit DevicesSemiconductor DefectsSemiconductor Device MaterialsSemiconductor InterfacesGate Oxide InterfacesInterface DefectsInterface StatesSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon DefectsSilicon Interfaces
This paper discusses the differences between Si-face and C-face MOS interfaces in 4H-SiC MOSFETs. The two interfaces exhibit unique electrical characteristics, which will be linked with the differences in interface defects. We carried out an electrically detected magnetic resonance (EDMR) study on Si-face and C-face 4H-SiC MOSFETs, and found that there are different types and different amounts of interface defects on each interface. We discussed the EDMR results in comparison with the electrical characteristics of Si-face and C-face MOSFETs.